Transferring semiconductor crystal from a substrate to a resin

ABSTRACT

A semiconductor crystal layer formed by epitaxial growth on a seed crystal substrate is embedded in an insulating material in the condition where the seed crystal substrate is removed, electrodes are provided respectively on a first surface of the semiconductor crystal layer and a second surface of the semiconductor layer opposite to the first surface, and lead-out electrodes connected to the electrodes are led out to the same surface side of the insulating material. The semiconductor crystal layer functions as a semiconductor light-emitting device or a semiconductor electronic device. The insulating material is, for example, a resin.

CROSS REFERENCE TO RELATED APPLICATIONS

[0001] This application is a Divisional of prior application Ser. No.10/308,914, filed on Dec. 3, 2002, entitled TRANSFERRING SEMICONDUCTORCRYSTAL FROM A SUBSTRATE TO A RESIN and now allowed which, in turn,claims priority to Japanese application No. JP2001-368570 filed Dec. 3,2001.

BACKGROUND OF THE INVENTION

[0002] The present invention relates to an electronic part including asan active device a semiconductor crystal layer formed by epitaxialgrowth on a seed crystal substrate, and a method of producing the same.Furthermore, the present invention relates to an image display systemincluding such electronic parts, and a method of manufacturing the same.

[0003] In the case of arranging light-emitting devices in a matrix formto assemble an image display system, it has hitherto been practiced toforming the devices directly on a substrate such as in the cases of aliquid crystal display system (LCD) and a plasma display panel (PDP) orto arrange singular LED packages in the case of a light-emitting diodedisplay (LED). For example, in the cases of the image display systemssuch as LCD and PDP, the devices cannot be separated individually, sothat it has been a usual practice to form the devices spaced from eachother by the pixel pitch of the image display system, from the beginningof the manufacture process.

[0004] On the other hand, in the case of the LED display, it has beenpracticed to take out the LED chips after dicing, and connect the LEDchips individually to external electrodes by bump connection using wirebonding or flip chips, thereby packaging the LED chips. In this case,the LED chips are arranged at the pixel pitch of the image displaysystem before or after the packaging, and the pixel pitch is made to beindependent from the pitch at which the devices are produced.

[0005] Since the LED (Light-Emitting Diode) as the light-emitting deviceis expensive, it is possible to lower the cost of the image displaysystem using the LEDs by producing a multiplicity of LED chips from asingle sheet of wafer. Namely, where the size of the LED chips isseveral tens of μm square, as contrasted to about 300 μm square in therelated art, and the LED chips are connected to manufacture an imagedisplay system, it is possible to reduce the price of the image displaysystem.

[0006] Meanwhile, among the individual semiconductor devices such as notonly the light-emitting diode but also, for example, laser diode andtransistor device, there are some devices in which the overall area ofthe device must be not less than several times of the active region (forexample, not less than 0.2 mm square) although the size of the activeregion necessary for operation is on the order of μm. This hampers anenhancement of the actual mounting density of the device or a loweringin the cost of the device.

[0007] For example, in the case of high-luminance LED, in account of thefact that a luminance of about several cd is obtained at a chip size ofabout 300 μm square and according to proportional shrinkage,low-luminance LED with a luminance of not more than about several mcdmight have an active region (active layer area) of about 10 μm square.However, according to the conventional device structure and conventionalmounting method, it is difficult to set the overall size of the devicecloser to the size of the active region. In the case of laser diode, theactive region is in a stripe form with a width of several μm and alength of several hundreds of μm, but in actual mounting, the devicesize has a width of not less than about 200 μm.

[0008] Particularly, in the case of a light-emitting diode or a laserdiode that is produced by epitaxial growth of a gallium nitride basedcrystal on a sapphire substrate, the cathode side (n-type semiconductorlayer) and the anode side (p-type semiconductor layer) are sequentiallylaminated. In this case, since the substrate is an insulating body, twoelectrodes must be provided on the growth surface side, so that thedevice size is large due to wire bonding, but the actual area of theactive region (active layer) is rather small. Therefore, internalresistance is high due to flow of current in a lateral direction, andseveral drawbacks such as unfavorable concentration of current aregenerated.

[0009] On the other hand, in the case of a light-emitting diode composedof an aluminum gallium indium phosphide based crystal grown on a galliumarsenide substrate, electrodes can be provided on both sides of thedevice, but a portion of the light emitted at an active layer isabsorbed by the substrate, so that only an external light emissionefficiency much lower than an intrinsic internal light emissionefficiency can be obtained. In order to solve this problem, a variety ofcontrivances have been practiced, for example, formation of asemiconductor multilayer film (DBR) for light reflection in the inside,formation of a thick window layer, or a transfer onto a transparentsubstrate. These contrivances lead to a rise in cost.

SUMMARY OF THE INVENTION

[0010] The present invention has been proposed in consideration of theabove situations in the related art. Accordingly, it is an object of thepresent invention to provide an electronic part in which the number ofdevices formed from a single sheet of crystalline wafer can be enlargedas compared with the conventional packaged devices, production cost canbe reduced, and it is easy to mount the electronic part in high density,and a method of producing the same. In addition, it is another object ofthe present invention to provide a large-type system, a high-performancesystem, and a system based on integration of a different kinds ofdevices (for example, image display system), which cannot be realizedwith a system based on integration of a multiplicity of devices producedby a monolithic process.

[0011] In order to attain the above objects, according to an aspect ofthe present invention, there is provided an electronic part,semiconductor crystal layer formed by epitxial growth on a seed crystalsubstrate is embedded in an insulating material in the condition wherethe seed crystal substrate is removed, electrodes are provided on afirst surface of the semiconductor crystal layer and a second surface ofthe semiconductor crystal layer opposite to the first surface, andlead-out electrodes connected to the electrodes are led out to the samesurface side of the insulating material. A method of producing anelectronic part according to the present invention includes a step ofepitaxial growth of a semiconductor crystal layer on a seed crystalsubstrate, a step of embedding the semiconductor crystal layer in aninsulating material and removing the seed crystal substrate, a step offorming an electrode connected to one surface of the semiconductorcrystal layer, a step of transferring the semiconductor crystal layerembedded in the insulating material onto a support substrate, a step offorming an electrode connected to the opposite side surface of thesemiconductor crystal layer, and a step of forming lead-out electrodesconnected to the electrodes by leading out the lead-out electrodes tothe same surface side of the insulating material.

[0012] In the electronic part having the above-mentioned structure, theregion necessary for actual mounting and leading-out of electrodes isminimized, and the overall size of the device is suppressed to be small.In addition, for example, in the case of a light-emitting diode, a laserdiode, or the like produced by epitaxial growth of a gallium nitridebased crystal on a sapphire substrate, such problems as an increase ininternal resistance and unfavorable concentration of current aredissolved. In the case of a light-emitting diode including an aluminumgallium indium phosphide based crystal grown on a gallium arsenidesubstrate, high light emission efficiency is realized, and suchcontrivances that may cause a rise in cost are unnecessary.

[0013] On the other hand, according to another aspect of the presentinvention, there is provided an image display system includingelectronic parts including light-emitting devices arranged in a matrixform on a substrate, each of the electronic parts constituting a pixel.A semiconductor crystal layer functioning as a light-emitting deviceproduced by epitaxial growth on a seed crystal substrate is embedded inan insulating material in the condition where the seed crystal substrateis removed, electrodes are provided respectively on a first surface ofthe semiconductor crystal layer and a second surface of thesemiconductor crystal layer opposite to the first surface, each of theelectronic parts is covered with an insulating layer, and lead-outelectrodes each connected to each of the electrodes of the semiconductorcrystal layer contained in the electronic part are led out to the faceside of the insulating layer. In addition, a method of manufacturing animage display system according to the present invention resides in amethod of manufacturing an image display system including electronicparts including light-emitting devices arranged in a matrix form on asubstrate, each of the electronic parts constituting a pixel. The methodincludes a step of epitaxially growing semiconductor crystal layers forfunctioning as light-emitting devices on a seed crystal substrate, afirst transfer step of transferring the semiconductor crystal layersonto a first temporary holding member in the condition where thesemiconductor crystal layers are spaced wider apart than they have beenarranged on the seed crystal substrate and holding the semiconductorcrystal layers by embedding the semiconductor crystal layers in aninsulating material, a step of forming electrodes connected to one sideof the semiconductor crystal layers, a second transfer step oftransferring the semiconductor crystal layers embedded in the insulatingmaterial onto a second temporary holding member, a step of formingelectrodes connected to the opposite side of the semiconductor crystallayers, a step of cutting the insulating material with the semiconductorcrystal layers embedded therein to separate individual electronic parts,a third transfer step of transferring the electronic parts held on thesecond temporary holding member onto a second substrate while spacingthe electronic parts further wider apart, a step of providing aninsulating layer so as to cover each of the electronic parts, and a stepof leading out, to the face side of the insulating layer, lead-outelectrodes connected to the electrodes of the semiconductor crystallayers contained in the electronic parts.

[0014] According to the image display system and the method ofmanufacturing the same, the light-emitting devices rearranged in thespaced-apart condition are arranged in a matrix form to constitute animage display portion. Therefore, the light-emitting devices produced byfine processing with a dense condition, namely, with a high degree ofintegration can be efficiently rearranged in the spaced-apart condition,and productivity is largely enhanced. In addition, the light-emittingdevices converted into electronic parts can be actually mounted in ahigh density, and wiring therefor can be easily formed.

[0015] According to the present invention, it is possible to provide anelectronic part such that the number of devices produced from a singlesheet of crystal wafer can be enlarged as compared with the conventionalpackaged devices, the production cost can be reduced, and actualmounting in a high density is easy. In addition, it is possible toprovide a large-type system, a high-performance system, and a systembased on integration of different kinds of devices (for example, animage display system), which cannot be realized with a system based onintegration of a multiplicity of devices produced by a monolithicprocess. On the other hand, according to the image display system andthe method of manufacturing the same according to the present invention,while the above-mentioned merits are maintained, the light-emittingdevices produced by fine processing with a dense condition, namely, witha high degree of integration can be efficiently rearranged with thespaced-apart condition. Therefore, an image display system with highaccuracy can be produced with high productivity.

BRIEF DESCRIPTION OF THE DRAWINGS

[0016] These and other objects of the invention will be seen byreference to the description, taken in connection with the accompanyingdrawing, in which:

[0017]FIG. 1 is a general sectional view showing one example in whichthe present invention is applied to a gallium nitride basedlight-emitting diode;

[0018]FIG. 2 is a general sectional view showing one example in which acathode take-out electrode is a transparent electrode;

[0019]FIG. 3 is a general sectional view showing one example in whichlight is outputted from the side of an electrode pad;

[0020]FIG. 4 is a general sectional view showing one example in which aside surface of a light-emitting diode is composed of a {1-101} crystalplane (S plane);

[0021]FIG. 5 is a general perspective view showing another example inwhich a side surface of a light-emitting diode is composed of an Splane;

[0022]FIG. 6 is a general sectional view showing one example in whichthe present invention is applied to an aluminum gallium indium phosphidebased light-emitting diode device;

[0023]FIG. 7 is a general sectional view showing one example in which acathode take-out electrode is a transparent electrode;

[0024]FIG. 8 is a general perspective view showing one example in whichthe present invention is applied to a gallium nitride based laser diode;

[0025]FIG. 9 is a general perspective view showing one example in whichthe present invention is applied to an aluminum gallium indium phosphidebased laser diode device;

[0026]FIG. 10 is a general sectional view showing one example in whichthe present invention is applied to a field effect type transistor;

[0027]FIG. 11 is a general plan view showing one example in which thepresent invention is applied to a field effect type transistor;

[0028]FIG. 12 is a general sectional view showing one example in which aresin layer is provided covering an electrode on the back side;

[0029]FIGS. 13A to 13D show schematic diagrams illustrating a method ofarranging devices;

[0030]FIG. 14 is a general perspective view of a resin molded chip;

[0031]FIG. 15 is a general plan view of the resin molded chip;

[0032]FIGS. 16A and 16B show views showing one example of alight-emitting device, in which FIG. 16A is a sectional view, and FIG.16B is a plan view;

[0033]FIG. 17 is a general sectional view showing a step of bonding afirst temporary holding member;

[0034]FIG. 18 is a general sectional view showing a step of curing aUV-curable adhesive;

[0035]FIG. 19 is a general sectional view showing a laser ablation step;

[0036]FIG. 20 is a general sectional view showing a step of separating afirst substrate;

[0037]FIG. 21 is a general sectional view showing a Ga removing step;

[0038]FIG. 22 is a general sectional view showing a step of forming adevice separation groove;

[0039]FIG. 23 is a general sectional view showing a step of bonding asecond temporary holding member;

[0040]FIG. 24 is a general sectional view showing a selective laserablation and UV exposure step;

[0041]FIG. 25 is a general sectional view showing a step of selectivelyseparating light-emitting diodes;

[0042]FIG. 26 is a general sectional view showing a step of embedding byuse of a resin;

[0043]FIG. 27 is a general sectional view showing a step of reducing thethickness of a resin layer;

[0044]FIG. 28 is a general sectional view showing a via forming step;

[0045]FIG. 29 is a general sectional view showing a step of forming anelectrode pad on the anode side;

[0046]FIG. 30 is a general sectional view showing a laser ablation step;

[0047]FIG. 31 is a general sectional view showing a step of separatingthe second temporary holding member;

[0048]FIG. 32 is a general sectional view showing a step of exposing acontact semiconductor layer;

[0049]FIG. 33 is a general sectional view showing a step of forming anelectrode pad on the side of a cathode;

[0050]FIG. 34 is a general sectional view showing a laser dicing step;

[0051]FIG. 35 is a general sectional view showing a step of selectivepick-up by a suction device;

[0052]FIG. 36 is a general sectional view showing a step of transferonto a second substrate;

[0053]FIG. 37 is a general sectional view showing another step oftransfer of light-emitting diodes;

[0054]FIG. 38 is a general sectional view showing a step of forming aninsulating layer;

[0055]FIG. 39 is a general sectional view showing a wiring forming step;and

[0056]FIG. 40 is a general sectional view showing a step of forming aprotective layer and a black mask.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

[0057] Now, an electronic part and a method of producing an electronicpart by application of the present invention, and further, an imagedisplay system and a method of manufacturing an image display system byapplication thereof will be described in detail below referring to thedrawings.

[0058]FIG. 1 shows an example in which the present invention is appliedto a gallium nitride based light-emitting diode. The light-emittingdiode is composed of an n-GaN window layer 1 epitaxially grown on asapphire substrate, a GaInN active layer 2, and a p-GaN clad layer 3.These semiconductor crystal layers are embedded in a resin layer 4. Thesize of the semiconductor crystal layer is, for example, not more than100 μm square, and the size of the resin layer 4 is, for example, notless than 150 μm square. Of the GaInN active layer 2, the regionsurrounded by the broken line is an active region, and a light output inthe direction of the arrow is obtained.

[0059] The n-GaN window layer 1 is exposed from the resin layer 4 to theoutside, and a cathode contact electrode 5 is provided in contact withthe surface fronting on the outside. In addition, a cathode take-outelectrode 6 is provided in the state of being connected to the cathodecontact electrode 5. A lead-out electrode 8 led out to an upper surface4 a in the figure of the resin layer 4 through a via 7 penetratingthrough the resin layer 4 is provided in the state of being connected tothe cathode take-out electrode 6. On the other hand, an anode contactelectrode 9 is provided in the state of being connected to the surfaceon the opposite side of the semiconductor crystal layer functioning as alight-emitting diode, namely, to the surface of the p-GaN clad layer 3,and again, an anode take-out electrode 11 led out to the upper surface 4a of the resin layer 4 through a via 10 is provided.

[0060] In this example, a semiconductor device having a size of not morethan 100 μm square is embedded in the resin having a size of not lessthan 150 μm square, the number of devices produced from a single sheetof wafer is greater as compared with that in the case of conventionaltype devices, and it is enabled to achieve a high light emissionefficiency and a mechanical mounting in a high density. Where thecathode take-out electrode 6 is formed of a transparent electrodematerial as a transparent electrode, take-out of light is not hinderedwithout forming the cathode take-out electrode 6 as a larger pattern toform an electrode pattern with high accuracy as shown in FIG. 2.

[0061] While a structure in which light is outputted downwards in thefigure, namely, from the surface on the opposite side of the surfacewhere electrode pads for connection (a lead-out electrode 8 and an anodetake-out electrode 11) are formed is adopted in the above example, astructure in which light is outputted from the surface where theelectrode pads are formed may also be adopted. FIG. 3 shows an examplein which the latter structure is adopted. In this example, the basicstructure is the same as that in FIG. 1 above, but the light isoutputted in the direction of the arrow (upwards in the figure) as shownin the figure.

[0062]FIG. 4 shows an example in which side surfaces of a light-emittingdiode (namely, a semiconductor crystal layer) are each constituted of a{1-101} crystal plane (S plane). Though the basic structure is the sameas that in FIG. 1, the side surfaces of the semiconductor crystal layercomposing of the n-GaN window layer 1, the GaInN active layer 2, and thep-GaN clad layer 3 are slant surfaces. With the side surfaces of thesemiconductor crystal layer being slant surfaces (S planes), the lightdischarged in lateral directions in the case of the device with thevertical side surfaces is radiated forwards after being reflected backdue to internal reflection, and the efficiency of take-out of lighttoward the front side (in the direction of the arrow) is enhanced.Therefore, as a result, the luminance as viewed from the front side isenhanced, in the case of operation with a fixed electric power.

[0063]FIG. 5 shows an example in which the structure shown in FIG. 4 isfurther developed. In this example, side surfaces of a light-emittingdiode (semiconductor crystal layer) are each composed of an S plane. Inconcrete, a growth inhibitive mask 1 a is provided on the surface of ann-GaN window layer 1, and by the crystal growth inhibitive effect of themask 1 a, an n-GaN window layer 1 b, a GaInN active layer 2, and a p-GaNclad layer 3 are epitaxially grown thereon in a conical shape or apolygonal pyramid shape. Where such a structure is adopted, the lightdischarged in lateral directions in the case of a device with verticalside surfaces is radiated forwards after being reflected back due tointernal reflection, and the luminance as viewed from the front side isenhanced. Simultaneously, the active layer formed on the S plane hasfewer crystal defects as compared with a conventional C plane (0001), sothat internal light emission efficiency is high, and synthetically, afurther enhancement of luminance is obtained.

[0064]FIG. 6 shows an example in which the present invention is appliedto an aluminum gallium indium phosphide based light-emitting diodedevice. The basic structure is the same as that shown in FIG. 1 above,and only the constitution of the device differs. In concrete, thealuminum gallium indium phosphide based light-emitting diode device iscomposed of an n-AlGaInP window layer 21 formed by epitaxial growth on aseed crystal substrate constituting of gallium arsenide or indiumphosphide, an AlGaNiP active layer 22, and a p-AlGaInP clad layer 23, asshown in FIG. 6. The aluminum gallium indium phosphide basedlight-emitting diode device is embedded in a resin layer 24; of theAlGaInP active layer 22, the region surrounded by the broken line is anactive region, and a light output is obtained in the direction of thearrow.

[0065] The n-AlGaInP window layer 21 is exposed from the resin layer 24to front on the outside, and a cathode contact electrode 25 is providedin contact with the surface fronting on the outside. In addition, acathode take-out electrode 26 is provided in the state of beingconnected to the cathode contact electrode 25. A lead-out electrode 28led out to an upper surface 24 a in the figure of the resin layer 24through a via 27 penetrating through the resin layer 24 is provided inthe state of being connected to the cathode take-out electrode 26. Onthe other hand, an anode contact electrode 29 is provided in contactwith the surface on the opposite side of the semiconductor crystal layerfunctioning as a light-emitting diode, namely, with the surface of thep-AlGaInP clad layer 23, and again, an anode take-out electrode 31 ledout to the upper surface 24 a of the resin layer 24 through a via 30 isprovided. In this example, the semiconductor device having a size of notmore than 100 μm square is embedded in a resin having a size of not lessthan 150 μm square, the number of devices produced from a single sheetof wafer is greater as compared with the conventional type devices, anda high light emission efficiency and a mechanical mounting in a highdensity are enabled. Where the cathode take-out electrode 26 is formedof a transparent electrode material as a transparent electrode, take-outof light is not hindered without forming the cathode take-out electrode26 as a large pattern to form an electrode pattern with high accuracy asshown in FIG. 7.

[0066]FIG. 8 shows an example in which the present invention is appliedto a gallium nitride based laser diode. The laser diode is composed ofan n-GaN window layer 41 epitaxially grown on a sapphire substrate, aGaInN active layer 42, and a p-GaN clad layer 43, and thesesemiconductor crystal layers are embedded in a resin layer 44. The p-GaNclad layer 43 has a rib portion 43 a with a predetermined width (forexample, 3 μm in width); corresponding to this, of the GaInN activelayer 42, the region surrounded by the broken line functions as anactive region, and a light output is obtained in the direction of thearrow.

[0067] The n-GaN window layer 41 is exposed from the resin layer 44 tofront on the outside, and a cathode contact electrode 45 is provided incontact with the surface fronting on the outside. In addition, a cathodetake-out electrode 46 is provided in the state of being connected to thecathode contact electrode 45. A lead-out electrode 48 led out to anupper surface 44 a in the figure of the resin layer 44 through a via 47penetrating through the resin layer 44 is provided in the state of beingconnected to the cathode take-out electrode 46. On the other hand, ananode contact electrode 49 is provided in contact with the surface onthe opposite side of the semiconductor crystal layer functioning as alaser diode, namely, with the surface of the rib portion 43 a of thep-GaN clad layer 43, and again, an anode take-out electrode 51 led outto the upper surface 44 a of the resin layer 44 through a via 50 isprovided.

[0068] In the above example, the width of the active region is about 3μm, so that the width of the semiconductor crystal layer to be diced canbe reduced to about 10 μm. In addition, by disposing this packagedirectly on a heat sink, it is possible to reduce thermal resistance ascompared with the case where the sapphire substrate is left, and torestrain a lowering in the performance due to heat generation. Further,by cleavage after separation from the sapphire substrate, the resultingflat end face becomes a mirror surface with high quality forconstituting an optical resonator, and a laser device with highperformance can be obtained in a high yield.

[0069]FIG. 9 shows an example in which the present invention is appliedto an aluminum gallium indium phosphide based laser diode device. Thebasic structure is the same as that shown in FIG. 8 above, and only theconstitution of the device differs. In concrete, the aluminum galliumindium phosphide based laser diode device is composed of an n-AlGaInPwindow layer 61 formed by epitaxial growth on a seed crystal substrateconstituting of gallium arsenide or indium phosphide, an AlGaInP activelayer 62, and a p-AlGaInP clad layer 63, as shown in FIG. 8. Thealuminum gallium indium phosphide based laser diode device is embeddedin a resin layer 64, and the p-AlGaInP clad layer 63 has a rib portion63 a with a predetermined width (for example, 3 μm in width);corresponding to this, of the AlGaInP active layer 62, the regionsurrounded by the broken line functions as an active region, and a lightoutput is obtained in the direction of the arrow.

[0070] The n-AlGaInP window layer 61 is exposed from the resin layer 64to front on the outside, and a cathode contact electrode 65 is providedin contact with the surface fronting on the outside. In addition, acathode take-out electrode 66 is provided in the state of beingconnected to the cathode contact electrode 65. A lead-out electrode 68led out to an upper surface 64 a in the figure of the resin layer 64through a via 67 penetrating through the resin layer 64 is provided inthe state of being connected to the cathode take-out electrode 66. Onthe other hand, an anode contact electrode 69 is provided in contactwith the surface on the opposite side of the semiconductor crystal layerfunctioning as a light-emitting diode, and again, an anode take-outelectrode 71 led out to the upper surface 64 a of the resin layer 64through a via 70 is provided.

[0071] Also in the above example, the width of the active region isabout 3 μm, so that the width of the semiconductor crystal layer to bediced can be reduced to about 10 μm. In addition, by disposing thispackage directly on a heat sink, it is possible to reduce thermalresistance as compared with the case where the sapphire substrate isleft, and to restrain a lowering in the performance due to heatgeneration. Further, where a window structure is formed in the vicinityof an end face so as to enhance the output, cleavage after removal ofthe substrate makes it possible to control the position of the end facewith high accuracy, and to obtain a device with stable performance in ahigh yield.

[0072]FIGS. 10 and 11 show an example in which the present invention isapplied to a field effect type transistor (FET). The field effect typetransistor is produced by providing a source electrode 82, a drainelectrode 83, a gate electrode 84, and the like on a semiconductorcrystal 81 constituting of Si, GaAs, or the like. The semiconductorcrystal 81 provided with these components is embedded in a resin layer85, and a bottom surface 81 a thereof is exposed from the resin layer 85to front on the outside. In addition, take-out electrodes 89, 90, and 91are led out from the source electrode 82, the drain electrode 83, andthe gate electrode 84 to a surface (the upper surface in the figure) ofthe resin layer 85 through vias 86, 87, and 88. A body take-outelectrode 92 is connected to the bottom surface 81 a of thesemiconductor crystal 81 and is connected to a take-out electrode 94 ledout to a surface (the upper surface in the figure) of the resin layer85, which is in the same manner as the other take-out electrodes 89, 90,and 91, through a via 93.

[0073] For example, in the cases of a switching transistor for pixels ina liquid crystal display system or a driving transistor for a minutelight-emitting diode with an operating current in a microampere region,the size of the active region may be not more than about 10 μm square,and the amount of semiconductor wafer used can be suppressed byminimizing the region necessary for actual mounting and take-out ofelectrodes. Therefore, an image display system substantially usingseveral hundreds of thousands of devices per system can be realized by ahybrid system, and it is possible to achieve an increase in area, whichcannot be achieved by a monolithic system. Besides, also in the sizeregion that is possible by the monolithic system utilizing an amorphoussemiconductor or a polycrystalline semiconductor, a system with highperformance can be obtained by actually mounting single-crystalsemiconductor devices by this method.

[0074] Meanwhile, in each of the electronic parts described above, it isalso possible to provide the resin layer covering the electrode on theback side, to facilitate the release or the like from, for example, atemporary holding substrate or the like, and to convert the device intothe so-called chip component part, which is easy to deal with. FIG. 12shows an example in which, in the gallium nitride based light-emittingdiode shown in FIG. 1, a resin layer 101 formed of polyimide or the likeis provided covering the cathode take-out electrode 6 formed on theresin layer 4, to convert the device into a chip component part. Such astructure can be easily formed through inversion, transfer, and the likesteps, and is a novel structure in which a both-side take-out structureon the resin layer is provided.

[0075] Next, description will be made by taking as an example an imagedisplay system obtained by application of rearrangement of devices by atwo-stage enlarged transfer method. First, basic constitutions of adevice arranging method based on the two-stage enlarged transfer methodand a method of manufacturing an image display system will be described.The device arranging method based on the two-stage enlarged transfermethod and the method of manufacturing the image display system includea two-stage enlarged transfer in which devices formed on a firstsubstrate in a high degree of integration are transferred onto atemporary holding member so that the devices are spaced wider apart thanthey have been arranged on the first substrate, and then the devicesheld on the temporary holding member are transferred onto a secondsubstrate while being spaced further wider apart. While the transfer isconducted in two stages in this example, the transfer may be conductedin three or more stages according to the degree of enlargement of thedevices.

[0076]FIGS. 13A to 13D show schematic diagrams respectively illustratingbasic steps of the two-stage enlarged transfer method. First, devices112 such as, for example, light-emitting devices are formed densely on afirst substrate 110 shown in FIG. 13A. With the devices formed densely,the number of the devices produced per substrate can be enlarged, andproduction cost can be lowered. The first substrate 110 is a substrateon which various devices can be produced such as, for example, asemiconductor wafer, a glass substrate, a quartz glass substrate, asapphire substrate, and a plastic substrate. The devices 112 may bethose formed directly on the first substrate 110, or may be formed onanother substrate and arranged on the first substrate 110.

[0077] Next, as shown in FIG. 13B, the devices 112 are transferred fromthe first substrate 110 onto a temporary holding member 111, and areheld on the temporary holding member 111. At this time, simultaneously,covering of the surroundings of the devices 112 with a resin isconducted on the basis of each of the devices 112. The covering of thesurroundings of the devices with the resin is conducted for facilitatingformation of electrode pads, for facilitating the treating of thedevices in a transfer step, and the like purposes. The adjacent devices112 are subjected to selective separation by, for example, transfersbetween a plurality of temporary holding members, whereby finally thedevices 112 are spaced apart on the temporary holding member, and arearranged in a matrix form as shown in the figure. Namely, while thedevices 112 are so transferred that they are spaced wider apart in anx-direction, the devices 112 are so transferred that they are spacedwider apart also in a y-direction perpendicular to the x-direction. Theinterval to which the devices 112 are spaced wider apart is notparticularly limited, and may for example be an interval determined bytaking into account the formation of a resin layer or formation ofelectrode pads in the subsequent steps.

[0078] After such a first transfer step, the devices 112 present on thetemporary holding member 111 are spaced apart, and formation ofelectrode pads is conducted on the basis of each of the devices 112, asshown in FIG. 13C. The formation of the electrode pads is conducted witha comparatively large pad size so that failure or defects in wiringwould not occur in the final wiring, which is performed after thesubsequent second transfer step, as will be described later. Theelectrode pads are not shown in FIG. 13C. The electrode pads are formedfor each of the devices 112 fixed by the resin 113, whereby resin-moldedchips 114 are formed. While the device 112 is located at a roughlycentral position of the resin-molded chip 114 in plan view, the device112 may be present at a position closer to one side or one corner of theresin-molded chip 114.

[0079] Next, as shown in FIG. 13D, the second transfer step isconducted. In this second transfer step, the devices 112 arranged in thematrix form on the temporary holding member 111 are transferred onto asecond substrate 115 so that they are spaced further wider apart on thebasis of the resin-molded chips 114. Also in the second transfer step,the adjacent devices 112 are spaced apart on the basis of theresin-molded chips 114, and are arranged in a matrix form as shown inthe figure. Namely, while the devices 112 are so transferred as to bespaced wider apart in the x-direction, the devices 112 are sotransferred as to be spaced wider apart also in the y-directionperpendicular to the x-direction. Where the positions of the devicesarranged by the second transfer step correspond to pixels of the finalproduct such as an image display system, roughly an integer times of theinitial pitch of the devices 112 will be the pitch of the devices 112arranged by the second transfer step. Here, the value E of the roughlyinteger times is expressed by the formula E=n×m, where n is the ratio ofenlargement of spaced pitch on the transfer from the first substrate 110onto the temporary holding member 111, and m is the ratio of enlargementof spaced pitch on the transfer from the temporary holding member 111onto the second substrate 115.

[0080] Wiring is applied to each of the devices 112 spaced apart on thebasis of the resin-molded chips 114 on the second substrate 115. At thistime, wiring is conducted while restraining as much as possible failureor defects in connection, by utilizing the electrode pads or the likepreliminarily provided. For example, where the devices 112 arelight-emitting devices such as light-emitting diodes, the wiringincludes wirings to p-electrodes and n-electrodes; where the devices 112are liquid crystal control devices, the wiring includes at least wiringsfor selection signal lines, voltage lines, orientation electrode films,and the like.

[0081] In the two-stage enlarged transfer method illustrated in FIG. 13,formation of the electrode pads and the like can be conducted byutilizing the spaces between the devices after the first transfer, andthe wiring is conducted after the second transfer; in this case, thewiring is conducted while restraining as much as possible failure ordefects in connection, by utilizing the electrode pads and the likepreliminarily provided. Therefore, it is possible to enhance the yieldof the image display system. In addition, in the two-stage enlargedtransfer method in this example, the steps of spacing the devices widerapart are two steps, and by performing a plurality of steps of enlargedtransfer for spacing the devices wider apart, the number of transfers isreduced in practice. Namely, for example, where the ratio of enlargementof spaced pitch on the transfer from the first substrate 110, 1110 aonto the temporary holding member 111, 111 a is 2 (n=2) and the ratio ofenlargement of spaced pitch on the transfer from the temporary holdingmember 111, 111 a onto the second substrate 115 is 2 (m=2), if thetransfer to the enlarged range is to be performed by a single transfer,the final enlargement ratio is 2×2=4 times, and the square of 4 is 16,so that it is necessary to perform the transfer, namely, alignment ofthe first substrate, 16 times. On the other hand, according to thetwo-stage enlarged transfer method in this example, the number of timesof alignment required is only 8 times in total, which is a simple sum ofthe 4 times, which is the square of the enlargement ratio of 2 in thefirst transfer step and the 4 times, which is the square of theenlargement ratio of 2 in the second transfer step. Namely, since(n+m)²=n²+2 nm+m², in the case of intending the same enlargement ratioof transfer, it is always possible to reduce the number of times oftransfer by 2 nm times according to the two-stage enlarged transfermethod. Therefore, the production process is reduced in time and cost byamounts corresponding to this number of times of alignment, which isparticularly profitable where the ratio of enlargement of pitch isgreat.

[0082] While the device 112 is, for example, a light-emitting diode inthe two-stage enlarged transfer method shown in FIG. 13, this is notlimitative, and the device may be any one selected from other devices,for example, a liquid crystal control device, a photo-electricconversion device, a piezoelectric device, a thin film transistordevice, a thin film diode device, a resistance device, a switchingdevice, a minute magnetic device, and a minute optical device, or a partthereof or a combination thereof.

[0083] In the second transfer step described above, the light-emittingdevices are dealt with as resin-molded chips and are respectivelytransferred from the temporary holding member onto the second substrate.The resin-molded chip will be described referring to FIGS. 14 and 15.The resin-molded chip 120 is obtained by fixing the surroundings of thedevice 121 arranged in a spaced-apart condition with the resin 122, andthe resin-molded chip 120 can be used at the time of transferring thedevice 121 from the temporary holding member onto the second substrate.The resin-molded chip 120 is roughly flat plate shaped, and majorsurfaces thereof are each roughly square. The shape of the resin-moldedchip 120 is a shape formed by fixing with the resin 122; concretely, theshape is obtained by applying an uncured resin to the whole surface soas to contain each device 121, and after curing of the resin, edgeportions are cut by dicing or the like.

[0084] Electrode pads 123 and 124 are provided respectively on the faceside and the back side of the roughly flat plate shaped resin 122. Theelectrode pads 123 and 124 are each formed by forming a conductive layersuch as a metallic layer and a polycrystalline silicon layer, whichconstitute the material of the electrode pads 123, 124 on the wholesurface, and then patterning the conductive layer into a requiredelectrode shape by photolithography technology. The electrode pads 123and 124 are so formed as to be connected respectively to the p-electrodeand an n-electrode of the device 121, which is the light-emittingdevice, and if necessary, the resin 122 is provided with via holes orthe like.

[0085] While the electrode pads 123 and 124 are provided respectively onthe face side and the back side of the resin-molded chip 120, they maybe provided on the same side of the resin-molded chip 120. In addition,since three electrodes for source, gate, and drain are present in thecase of a thin film transistor, for example, three or more electrodepads may be provided. The arrangement in which the positions of theelectrode pads 123 and 124 are staggered from each other in plan view isfor ensuring that contacts taken from the upper side at the time offinal formation of wirings will not overlap with each other. The shapeof the electrode pads 123 and 124 is not limited to square, and may beother shape.

[0086] By constituting such a resin-molded chip 120, the surroundings ofthe device 121 can be covered with the resin 122, which is planarized,whereby the electrode pads 123 and 124 can be formed with high accuracy,and the electrode pads 123 and 124 can be extended to wider areas ascompared with the device 121, whereby treating of the device 121 isfacilitated in the case of conducting transfer in the subsequent secondtransfer step by use of a suction jig. As will be described later, thefinal wiring is conducted after the subsequent second transfer step, sothat failure or defects in wiring can be prevented by conducting thewiring by utilizing the electrode pads 123 and 124 whose size iscomparatively large.

[0087] Next, FIGS. 16A and 16B show the structure of a light-emittingdevice as an example of a device used in the two-stage enlarged transfermethod in this example. FIG. 16A is a sectional view of the device, andFIG. 16B is a plan view of the same. The light-emitting device is a GaNbased light-emitting diode and is crystally grown on, for example, asapphire substrate. In such a GaN based light-emitting diode, laserablation is generated by irradiation with laser transmitted through thesubstrate, and film exfoliation is generated at the interface betweenthe sapphire substrate and the GaN based grown layer in accordance withon the phenomenon in which nitrogen in GaN is gasified.

[0088] First, as to the structure, a hexagonal base pyramid shaped GaNlayer 132 selectively grown on a ground growth layer 131 forming of aGaN based semiconductor layer is provided. An insulating film not shownis present on the ground growth layer 131, and the hexagonal basepyramid shaped GaN layer 132 is formed on an opened portion of theinsulating film by an MOCVD method or the like. The GaN layer 132 is apyramid shaped grown layer covered with S planes (1-101 planes) wherethe primary surface of the sapphire substrate used for growth is a Cplane and is a region doped with silicon. The portions of the inclined Splanes of the GaN layer 132 function as clads with a double-heterostructure. An InGaN layer 133, which is an active layer is provided soas to cover the inclined S planes of the GaN layer 132, and amagnesium-doped GaN layer 134 is provided on the outside thereof. Themagnesium-doped GaN layer 134 also functions as a clad.

[0089] Such a light-emitting diode is provided with a p-electrode 135and an n-electrode 136. The p-electrode 135 is formed by vapordeposition of a metallic material such as Ni/Pt/Au or Ni(Pd)/Pt/Au onthe magnesium-doped GaN layer 134. The n-electrode 136 is formed byvapor deposition of a metallic material such as Ti/Al/Pt/Au on theopened portion of the insulating film (not shown) described above. Inthe case where the n-electrode is taken out from the back side of theground growth layer 131, formation of the n-electrode 136 is not neededon the face side of the ground growth layer 131.

[0090] The GaN based light-emitting diode having such a structure is adevice capable also of emitting blue light, and particularly, can bereleased from the sapphire substrate comparatively easily by laserablation; selective release can be realized by selective irradiationwith laser beam. The GaN based light-emitting diode may have a structurein which the active layer is provided in a flat plate shape or a beltshape, and may have a pyramidal structure in which a C plane is providedat a top end portion. In addition, other nitride based light-emittingdiodes and compound semiconductor devices may also be adopted.

[0091] Next, a concrete technique of manufacturing an image displaysystem by applying the light-emitting device arranging method shown inFIG. 13 will be described. The light-emitting device uses a GaN basedlight-emitting diode shown in FIG. 16. First, as shown in FIG. 17, aplurality of light-emitting diodes 142 are provided in a dense conditionon a primary surface of a first substrate 141. The size of thelight-emitting diodes 142 can be minute, for example, about 20 μmsquare. As a material for constituting the first substrate 141, amaterial having a high transmittance for the wavelength of the laser,which the light-emitting diodes 142 are irradiated such as a sapphiresubstrate, is used. The light-emitting diodes 142 are each provided withup to the p-electrode, but the final wiring is not yet conducted;grooves 142 g for separation between the devices are provided, and theindividual light-emitting diodes 142 can be separated. Formation of thegrooves 142 g is conducted by reactive ion etching, for example.

[0092] Next, the light-emitting diodes 142 on the first substrate 141are transferred onto a first temporary holding member 143. Here, as anexample of the first temporary holding member 143, there can be used aglass substrate, a quartz glass substrate, a plastic substrate, and thelike; in this example, a quartz glass substrate is used. In addition, arelease layer 144 functioning as a mold release layer is provided on thesurface of the first temporary holding member 143. For the release layer144, there can be used a fluoro coat, a silicone resin, a water-solubleadhesive (for example, polyvinyl alcohol [PVA]), polyimide, and thelike; here, polyimide is used.

[0093] At the time of transfer, as shown in FIG. 17, an adhesive (forexample, a UV-curable type adhesive) 145 is applied onto the firstsubstrate 141 in such an amount as to cover the light-emitting diodes142, and the first temporary holding member 143 is laid thereon so as tobe supported by the light-emitting diodes 142. In this condition, theadhesive 145 is irradiated with ultraviolet rays (UV) from the back sideof the first temporary holding member 143 as shown in FIG. 18, therebycuring the adhesive 145. The first temporary holding member 143 is aquartz glass substrate, so that the ultraviolet rays are transmittedtherethrough, to rapidly cure the adhesive 145.

[0094] At this time, the first temporary holding member 143 is supportedby the light-emitting diodes 142, so that the spacing between the firstsubstrate 141 and the first temporary holding member 143 is determinedby the height of the light-emitting diodes 142. When the adhesive 145 iscured under the condition where the first temporary holding member 143is so laminated as to be supported by the light-emitting diodes 142 asshown in FIG. 18, the thickness t of the adhesive 145 is restricted bythe spacing between the first substrate 141 and the first temporaryholding member 143. Therefore, the thickness of t of the adhesive 145 isrestricted by the height of the light-emitting diodes 142. Namely, thelight-emitting diodes 142 on the first substrate 141 play the role ofspacer, whereby the adhesive layer with a fixed thickness is formedbetween the first substrate 141 and the first temporary holding member143. Thus, in the above-described method, the thickness of the adhesivelayer is determined by the height of the light-emitting diodes 142, sothat an adhesive layer with a fixed thickness can be formed withoutsevere control of pressure.

[0095] After the curing of the adhesive 145, as shown in FIG. 19, thelight-emitting diodes 142 are irradiated with laser from the back sideof the first substrate 141, and the light-emitting diodes 142 arereleased from the first substrate 141 by utilizing laser ablation. Sincethe GaN based light-emitting diode 142 is decomposed into metallic Gaand nitrogen at the interface between itself and sapphire, thelight-emitting diodes 142 can be released comparatively easily. As thelaser for irradiation, excimer laser, higher harmonic YAG laser may beused. By the release utilizing the laser ablation, the light-emittingdiodes 142 are separated at the interface between themselves and thefirst substrate 141, and are transferred onto the temporary holdingmember 143 in the state of being embedded in the adhesive 145.

[0096]FIG. 20 shows the condition where the first substrate 141 has beenremoved by the above-mentioned release. At this time, the GaN basedlight-emitting diodes have been released from the first substrate 141composing of the sapphire substrate by the laser, and Ga 146 has beendeposited at the release surface, so that the deposited Ga must beetched. In view of this, wet etching is conducted by use of an aqueousNaOH solution or diluted nitric acid, whereby Ga 146 is removed, asshown in FIG. 21. Further, cleaning of the surface is conducted by useof oxygen plasma (02 plasma), then, as shown in FIG. 22, the adhesive145 is cut along the dicing grooves 147 by dicing, and dicing on thebasis of each light-emitting diode 142 is conducted, followed byselective separation of the light-emitting diodes 142. The dicingprocess may be conducted by conventional blade dicing; where narrow cutswith a width of not more than 20 μm is necessary, laser processing byuse of the above-mentioned laser is conducted. The width of the cutsdepends on the size of the light-emitting diode 142 covered with theadhesive 145 in the pixel of the image display system; as one example,grooves are processed by excimer laser, whereby the shape of the chip isformed.

[0097] For selectively separating the light-emitting diodes 142, first,as shown in FIG. 23, a UV adhesive 148 is applied onto the cleanedlight-emitting diodes 142, and a second temporary holding member 149 islaid thereon. As the second temporary holding member 149, there can beused a glass substrate, a quartz glass substrate, a plastic substrate inthe same manner as in the case of the first temporary holding member143; in this example, a quartz glass substrate is used. A release layer150 formed of polyimide or the like is preliminarily provided also onthe face side of the second temporary holding member 149.

[0098] Next, as shown in FIG. 24, laser is radiated from the back sideof the first temporary holding member 143 at only the positionscorresponding to the light-emitting diodes 142 a being the objects oftransfer, and the light-emitting diodes 142 a are released from thefirst temporary holding member 143 by laser ablation. Simultaneously, UVexposure is conducted by radiating ultraviolet rays (UV) from the backside of the second temporary holding member 149 at the positionscorresponding to the light-emitting diodes 142 a being the objects oftransfer, and the UV-curable adhesive 148 at these locations is cured.Thereafter, the second temporary holding member 149 is released from thefirst temporary holding member 143, upon which only the light-emittingdiodes 142 a being the objects of transfer are selectively separated,and are transferred onto the second temporary holding member 149, asshown in FIG. 25.

[0099] After the selective separation, as shown in FIG. 26, a resin isapplied so as to cover the transferred light-emitting diodes 142, toform a resin layer 151. Further, as shown in FIG. 27, the thickness ofthe resin layer 151 is reduced by oxygen plasma or the like, and asshown in FIG. 28, via holes 152 are formed by irradiation with laser atpositions corresponding to the light-emitting diodes 142. For formationof the via holes 152, there can be used excimer laser, higher harmonicYAG laser, carbon dioxide gas laser, and the like. At this time, the viaholes 152 are formed by opening holes with a diameter of about 3 to 7μm, for example.

[0100] Next, anode side electrode pads 153 to be connected to thep-electrodes of the light-emitting diodes 142 through the via holes 152are provided. The anode side electrode pads 153 are formed of, forexample, Ni/Pt/Au. FIG. 29 shows the condition where the light-emittingdiodes 142 have been transferred onto the second temporary holdingmember 149, the via holes 152 on the side of the anode electrodes(p-electrodes) have been formed, and then the anode side electrode pads153 have been formed.

[0101] After the anode side electrode pads 153 are formed, transfer ontoa third temporary holding member 154 is conducted, for formation ofcathode side electrodes on the opposite side. The third temporaryholding member 154 also is formed, for example, of quartz glass. At thetime of transfer, as shown in FIG. 30, an adhesive 155 is applied to thelight-emitting diodes 142 provided with the anode side electrode pads153 and to the resin layer 151, and the third temporary holding member154 is adhered thereonto. In this condition, laser is radiated from theback side of the second temporary holding member 149, upon which releasedue to laser ablation occurs at the interface between the secondtemporary holding member 149 formed of quartz glass and the releaselayer 150 formed of polyimide on the second temporary holding member149. The light-emitting diodes 142 and the resin layer 151, which areformed on the release layer 150 are transferred onto the third temporaryholding member 154. FIG. 31 shows the condition where the secondtemporary holding member 149 has been separated.

[0102] At the time of forming the cathode side electrodes, after theabove-mentioned transfer step, an 02 plasma processing shown in FIG. 32is conducted to remove the release layer 150 and excess portions of theresin layer 151, thereby exposing a contact semiconductor layer(n-electrodes) of the light-emitting diodes 142. In the condition wherethe light-emitting diodes 142 are held by the adhesive layer 155 on thetemporary holding member 154, the back side of the light-emitting diodes142 is the n-electrode side (cathode electrode side); when electrodepads 156 are provided as shown in FIG. 33, the electrode pads 156 areelectrically connected to the back side of the light-emitting diodes142. The electrode pad on the cathode side at this time can be, forexample, about 60 μm square. As the electrode pads 156, there may beused transparent electrodes (ITO, ZnO based) or a material such asTi/Al/Pt/Au. In the case of the transparent electrodes, emission oflight would not be blocked even if the back side of the light-emittingdiodes 142 is largely covered with the transparent electrodes, so thatpatterning accuracy may be rough, large electrodes can be formed, andthe patterning process becomes easy.

[0103] Next, the light-emitting diodes 142 fixed with the resin layer151 and the adhesive 155 are individually diced, into the state of theabove-mentioned resin-molded chips. The dicing may be performed, forexample, by laser dicing. FIG. 34 shows a dicing step by laser dicing.The laser dicing is conducted by irradiation with a laser line beam,whereby the resin layer 151 and the adhesive 155 are cut until the thirdtemporary holding member 154 is exposed. By the laser dicing, thelight-emitting diodes 142 are diced as the resin-molded chips having apredetermined size and are transported to an actual mounting step, whichwill be described later.

[0104] In the actual mounting step, the light-emitting diodes 142(resin-molded chips) are released from the third temporary holdingmember 154 by a combination of a mechanical means (suction of thedevices by vacuum suction) and laser ablation. FIG. 35 illustrates thecondition where the light-emitting diodes 142 arranged on the thirdtemporary holding member 154 are picked up by a suction equipment 157.Suction holes 158 at this time are opened in a matrix form with thepixel pitch of the image display system, and a multiplicity of thelight-emitting diodes 142 can be picked up by suction at a stroke. Forexample, the diameter of the openings is about 100 μm, the pitch of thematrix is about 600 μm, and about 300 pieces are picked up by suction ata stroke. At this time, the member of the suction holes 158 is producedby Ni electroplating, or a metallic sheet of stainless steel (SUS), orthe like provided with holes by etching. A suction chamber 159 isprovided at the depth of the suction holes 158, and the negativepressure in the suction chamber 159 is controlled, whereby thelight-emitting diodes 142 can be picked up by suction. At this stage,the light-emitting diodes 142 are covered with the resin layer 151, andthe upper surface thereof is roughly planarized. Therefore, selectivesuction by the suction equipment 157 can be carried out easily.

[0105] At the time of releasing the light-emitting diodes 142, pick upby suction of the devices by the suction equipment 157 is combined withthe release of the resin-molded chips by laser ablation, whereby thereleasing causes to proceed smoothly. The laser ablation is conducted byradiating the laser from the back side of the third temporary holdingmember 154. By the laser ablation, release is generated at the interfacebetween the third temporary holding member 154 and the adhesive 155.

[0106]FIG. 36 illustrates the transfer of the light-emitting diodes 142onto a second substrate 161. The second substrate 161 is a wiringsubstrate provided with a wiring layer 162, and at the time of fittingthe light-emitting diodes 142 thereto, an adhesive layer 163 ispreliminarily applied to the second substrate 161. The adhesive layer163 beneath the light-emitting diodes 142 is cured, whereby thelight-emitting diodes 142 can be arranged in the state of being fixed tothe second substrate 161. At the time of the fitting, the suctionchamber 159 of the suction equipment 157 is in a high pressurecondition, so that the connection between the suction equipment 157 andthe light-emitting diodes 142 by suction is released. The adhesive layer163 can be formed of a UV-curable type adhesive, a thermosettingadhesive, a thermoplastic adhesive, or the like. The positions ofarrangement of the light-emitting diodes 142 on the second substrate 161is spaced wider apart than in the arrangement on the first temporaryholding member 154. The energy for curing the resin constituting theadhesive layer 163 is supplied from the back side of the secondsubstrate 161. The adhesive layer 163 only at locations beneath thelight-emitting diodes 142 is cured by a UV irradiation equipment in thecase of the UV-curable type adhesive, and by infrared ray heating in thecase of the thermosetting adhesive. In the case of the thermoplasticadhesive, the adhesive is melted by irradiation with infrared rays orlaser, and adhesion is achieved.

[0107]FIG. 37 shows a process of arranging light-emitting diodes 164 forother color on the second substrate 161. When the suction equipment 157shown in FIG. 35 is used as it is and mounting is conducted by shiftingthe mounting positions on the second substrate 161 to the other colorpositions, it is possible to form pixels constituting of a plurality ofcolors while maintaining the pixel pitch to be constant. Here, thelight-emitting diodes 142 and the light-emitting diodes 164 may notnecessarily have the same shape. In FIG. 37, the light-emitting diodes164 for red color have a structure lacking in the hexagonal base pyramidshaped GaN layer and are different from the light-emitting diodes 142 inshape. At this stage, the light-emitting diodes 142 and 164 have alreadybeen covered with the resin layer 151 and the adhesive 155 to be theresin-molded chips, so that they can be dealt with in the same mannernotwithstanding the difference in device structure.

[0108] Next, as shown in FIG. 38, an insulating layer 165 is providedcovering the resin-molded chips containing the light-emitting diodes142, 164. As the insulating layer 165, there can be used a transparentepoxy adhesive, a UV-curable type adhesive, polyimide, and the like.After the formation of the insulating layer 165, a wiring forming stepis conducted. FIG. 39 illustrates the wiring forming step. The figureshows the condition where the insulating layer 165 is provided withopening portions 166, 167, 168, 169, 170, and 171, and wirings 172, 173,and 174 for connection between the electrode pads for anodes andcathodes of the light-emitting diodes 142, 164 and a wiring layer 162 onthe second substrate 161. The opening portions, namely, via holes formedat this time can be large because the areas of the electrode pads forthe light-emitting diodes 142, 164 are large, and the positionalaccuracy of the via holes can be rougher as compared with the via holesthat are formed directly in the light-emitting diodes. For example, viaholes with a diameter of about 20 μm can be formed, for the electrodepads having a size of about 60 μm square. As for the depth of the viaholes, there are three kinds of depth, for connection with the wiringsubstrate, for connection with the anode electrode, and for connectionwith the cathode electrode. Therefore, optimum depths are opened bycontrolling the pulse number of laser.

[0109] Thereafter, as shown in FIG. 40, a protective layer 175 isprovided, and a black mask 176 is formed, to complete the panel of theimage display system. The protective layer 175 at this time is the sameas the insulating layer 165 shown in FIG. 37. Materials such as atransparent epoxy resin can be used. The protective layer 175 is heatedand cured, to wholly cover the wirings. Thereafter, a driver IC isconnected with the wiring at an end portion of the panel, whereby adriving panel is manufactured.

[0110] In the light-emitting device arranging method as described above,at the time when the light-emitting diodes 142 are held on the temporaryholding member 149, 154, the interval between the devices is alreadyenlarged, and the electrode pads 153, 156 with a comparatively largesize can be provided by utilizing the enlarged spacing. Since the wiringis conducted by utilizing the electrode pads 153, 156 having thecomparatively large size, wiring can be easily carried out even in thecase where the final system size is conspicuously large as compared withthe device size. In addition, in the light-emitting device arrangingmethod in this example, the surroundings of the light-emitting diodes142 are covered with the resin layer 151, and the planarization makes itpossible to form the electrode pads 153, 156 with high accuracy.Besides, the electrode pads 153, 156 can be extended over a wider regionas compared with the device, and, in the case of performing the transferin the subsequent second transfer step by a suction jig, easy treatingof the devices is promised.

[0111] While a preferred embodiment of the invention has been describedusing specific terms, such description is for illustrative purposesonly, and it is to be understood that changes and variations may be madewithout departing from the spirit or scope of the following claims.

What is claimed is:
 1. A method of producing an electronic part,comprising steps of epitaxially growing a semiconductor crystal layer ona seed crystal substrate, embedding said semiconductor crystal layerinto an insulating material and removing said seed crystal substrate,forming an electrode connected to a surface on one side of saidsemiconductor crystal layer, transferring said semiconductor crystallayer embedded in said insulating material onto a support substrate,forming an electrode connected to a surface on an opposite side of saidsemiconductor crystal layer, and forming lead-out electrodes connectedto said electrodes in a manner of leading out to a same surface side ofsaid insulating material.
 2. A method of producing an electronic part asset forth in claim 1, wherein a sapphire substrate is used as said seedcrystal substrate, a crystal of a Group III compound is used as saidsemiconductor crystal layer, and irradiation with laser light is usedfor removal of said seed crystal substrate.
 3. A method of producing anelectronic part as set forth in claim 1, wherein gallium arsenide orindium phosphide is used as said seed crystal substrate, aluminumgallium indium phosphide or aluminum gallium indium arsenide is used assaid semiconductor crystal layer, and wet type selective etching is usedfor removal of said seed crystal substrate.
 4. A method of producing anelectronic part as set forth in claim 1, wherein silicon is used as saidseed crystal substrate, a silicon crystal formed through a silicon oxidelayer is used as said semiconductor crystal layer, and wet typeselective etching is used for removal of said seed crystal substrate. 5.A method of manufacturing an image display system comprising electronicparts containing light-emitting devices and arranged in a matrix form ona substrate, each of said electronic parts constituting a pixel, whereinsaid method comprises: a step of epitaxially growing semiconductorcrystal layers functioning as light-emitting devices on a seed crystalsubstrate, a first transfer step of transferring said semiconductorcrystal layers onto a first temporary holding member so that saidsemiconductor crystal layers are spaced wider apart than they have beenarranged on said seed crystal substrate and embedding said semiconductorcrystal layers in an insulating material, a step of forming electrodesconnected to surfaces on one side of said semiconductor crystal layers,a second transfer step of transferring said semiconductor crystal layersembedded in said insulating material onto a second temporary holdingmember, a step of forming electrodes connected to surfaces on theopposite side of said semiconductor crystal layers, a step of cuttingsaid insulating material with said semiconductor crystal layers embeddedtherein to separate cut bodies as electronic parts, a third transferstep of transferring said electronic parts held on said second temporaryholding member onto a second substrate while spacing said electronicparts further wider apart, a step of forming an insulating layer so asto cover each of said electronic parts, and forming lead-out electrodesconnected to said electrodes of said semiconductor crystal layerscontained in said electronic parts in a manner of leading out to a faceside of said insulating layer.